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Gigabyte 500GB AORUS GEN4 NVMe M.2 PCIe4 SSD UP TO READ 5000MB/s WRITE 3800MB/s 5YR WTY Product may vary from image. Rely only on description for purchasing decisions.

Gigabyte 500GB AORUS GEN4 NVMe M.2 PCIe4 SSD, UP TO READ 5000MB/s, WRITE 3800MB/s, 5YR WTY [GP-AG450E500G-G]

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GP-AG450E500G-G
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1 Gigabyte Gigabyte 500GB AORUS GEN4 NVMe M.2 PCIe4 SSD UP TO READ 5000MB/s WRITE 3800MB/s 5YR WTY Available
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Gigabyte GP-AG450E500G-G Description:

Level up your gaming experience

Built with a high-quality controller and 3D TLC NAND flash, AORUS Gen4 5000E SSD delivers up to 5,000MB/s sequential read and 3,800MB/s sequential write performance. By utilizing Host Memory Buffer technology, the SSD controller can access the host DRAM without performance loss. As for features, AORUS Gen4 5000E SSD supports TRIM, SMART, and Over-Provision technologies to improve the reliability and durability of SSDs. AORUS Gen4 5000E SSD allows users to enjoy a smoother and faster gaming experience with more power efficiency.

 

 

Selected High Speed 3D TLC NAND Flash (1600+ MT/s)

The ultra high speed-1600+ MT/s throughput-3D TLC NAND, are selected by critical criteria, combined with the AORUS Gen4 5000E SSD's firmware optimizations, lead to superior performance.

 

Improve efficiency & responsiveness

Equipped with a robust combination of controller and new generation 3D TLC NAND, AORUS Gen4 5000E SSD delivers blazing speeds: up to 5,000 MB/s for sequential read, and up to 3,800MB/s sequential write. Sequential Read performance of PCIe 4.0 SSDs is up to 30% faster than PCIe 3.0 SSDs. AORUS Gen4 5000E SSD puts you in the computing fast lane.

 

Power Saving While Operating

AORUS Gen4 5000E SSD leverages a controller which produces lower power consumption for all the high-performance computing needs. Compared with regular PCIe 4.0 x4 SSD, AORUS Gen4 5000E SSD reduces about 30% power while operating. The power consumption of AORUS Gen4 5000E SSD is notably improved.

Gigabyte GP-AG450E500G-G Specifications:

Interface PCI-Express 4.0x4, NVMe 1.4

Form Factor

M.2 2280
Total Capacity 500GB
NAND 3D TLC NAND Flash
Sequential Read speed Up to 5,000 MB/s
Sequential Write speed Up to 3,800 MB/s
Power Consumption (Active) Average : R : 4W / W : 4W
Temperature (Operating) 0°C to 70°C
Dimension 80 x 22 x 2.3 mm

 

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